PART |
Description |
Maker |
SDM100K30L-7 SDM100K30L08 |
DIODE SCHOTTKY 30V 1.0A SOD323 1 A, 30 V, SILICON, SIGNAL DIODE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Diodes, Inc. Diodes Incorporated
|
Q62702-B824 BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
http:// Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
BB669 |
ER 4C 4#16S PIN PLUG RTANG Varactordiodes - Silicon tuning diode for VHF 2-band hyperband TV tuners
|
Infineon Technologies AG
|
Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
KDV1472 |
FM Tuning VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING) Negative Fixed Linear Voltage Regulators; Package: TO-99; VDIFF (V): 35; IOUT (A): 1.5;
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
ZLLS410TC ZLLS410-12 ZLLS410TA |
10V Low leakage Schottky diode in SOD323
|
Diodes Incorporated
|